Abstraction NBTI model
| dc.contributor.author | Adolf, Stephan | |
| dc.contributor.author | Nebel, Wolfgang | |
| dc.date.accessioned | 2022-01-18T11:29:52Z | |
| dc.date.available | 2022-01-18T11:29:52Z | |
| dc.date.issued | 2021 | |
| dc.description.abstract | Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus one is interested in predicting this effect during design time. In this work an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently the conversion into estimated threshold voltage damages is a very time consuming process. | en |
| dc.identifier.doi | 10.1515/itit-2021-0005 | |
| dc.identifier.pissn | 2196-7032 | |
| dc.identifier.uri | https://dl.gi.de/handle/20.500.12116/37957 | |
| dc.language.iso | en | |
| dc.publisher | De Gruyter | |
| dc.relation.ispartof | it - Information Technology: Vol. 63, No. 4 | |
| dc.subject | Transistor aging | |
| dc.subject | Negative Bias Temperature Instability | |
| dc.subject | NBTI | |
| dc.subject | Aging simulation | |
| dc.subject | Reliability | |
| dc.title | Abstraction NBTI model | en |
| dc.type | Text/Journal Article | |
| gi.citation.endPage | 310 | |
| gi.citation.publisherPlace | Berlin | |
| gi.citation.startPage | 299 |