Vishwakarma, AbhinavFritscher, MarkusHagelauer, AmelieReichenbach, Marc2023-06-062023-06-062023https://dl.gi.de/handle/20.500.12116/41704RRAM devices have recently seen wide-spread adoption into applications such as neural networks and storage elements since their inherent non-volatility and multi-bit-capability renders them a possible candidate for mitigating the von-Neumann bottleneck. Researchers often face difficulties when developing edge devices, since dealing with sensors detecting parameters such as humidity or temperature often requires large and power-consuming ADCs. We propose a possible mitigation, namely using a RRAM device in combination with a comparator circuit to form a basic block for threshold detection. This can be expanded towards programmable non-uniform sampling ADCs, significantly reducing both area and power consumption since significantly smaller bit-resolutions are required. We demonstrate how a comparator circuit designed in 130 nm technology can be reprogrammed by programming the incorporated RRAM device. Our proposed building block consumes 83 µW.enADC; CMOS circuit; comparator; memristor; non-uniform sampling; sensorsText/Journal Article10.1515/itit-2023-00212196-7032