Adolf, StephanNebel, Wolfgang2022-01-182022-01-182021https://dl.gi.de/handle/20.500.12116/37957Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus one is interested in predicting this effect during design time. In this work an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently the conversion into estimated threshold voltage damages is a very time consuming process.enTransistor agingNegative Bias Temperature InstabilityNBTIAging simulationReliabilityText/Journal Article10.1515/itit-2021-00052196-7032